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Home » Products » Graphene » Monolayer Graphene on SiO2/Si Substrate, Size: 3″
Monolayer Graphene on SiO2/Si Substrate, Size: 4" €403,30
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Monolayer Graphene on SiO2/Si Substrate, Size: 2" €256,70
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Monolayer Graphene on SiO2/Si Substrate, Size: 3″

€309,00

Size: 3″,?Grain Size: 6-10 ?m

To pay, you need to add the €250,00 amount to your cart.
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SKU: PN01CG0102 Category: Graphene Tag: graphene
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Description

Monolayer Graphene on SiO2/Si Substrate

Size: 3″, Grain Size: 6-10 ?m

Technical Properties of Graphene Film:

Transparency > 95 %
Coverage > 93%
Thickness (theoretical) 0.340 nm
Sheet Resistance 500-530 Ohms/sq
Grain size 6-10 ?m

Technical Properties of SiO2/Si Substrate:

Size (inch) 3”
Dry Oxide Thickness 300 nm
Type Phosphor doped / N type
Orientation <100>
Resistivity 0.001 – 0.01
Thickness 525 +/- 20 ?m
Front surface One Side Polished

Applications:

Graphene research; Supercapacitors; Catalyst; Solar energy; Graphene optoelectronics, plasmonics and nanophotonics;
Graphene semiconductor chips; Conductive graphene film; Graphene computer memory; Biomaterials and Bioelectronics.

SEM Image of Monolayer Graphene

Raman Image Of Monolayer Graphene

Method of Preparation ?Graphene on Si/SiO2 Substrate?was prepared by the following steps:

1) Single layer graphene grown on copper foil
2) Deposit PMMA and curing process
3) Remove Cu by etching process
4) Wash PMMA/Graphene in DI water
5) Redeposit PMMA/Graphene onto Si substrate and curing process
6) Remove PMMA with aceton
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Monolayer Graphene on SiO2/Si Substrate, Size: 3″

€309,00
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